Phonon-limited mobility and injection velocity in n- and p-doped ultrascaled nanowire field-effect transistors with different crystal orientations

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Luisier, Mathieu ^a   Klimeck, Gerhard ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICITY; CHANNEL ORIENTATIONS; CONFINED PHONONS; ELECTRON PHONON SCATTERING; INAS; INJECTION VELOCITY; LOW FIELD MOBILITY; P-TYPE; SI NANOWIRE; TIGHT-BINDING APPROACHES;

CRYSTAL ORIENTATION; ELECTRON DEVICES; GERMANIUM; INDIUM ARSENIDE; MESFET DEVICES; NANOWIRES; PHONONS; PHOSPHORUS;

FIELD EFFECT TRANSISTORS;

EID: 79951831860     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703324     Document Type: Conference Paper

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