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Volumn 6, Issue 11, 2006, Pages 2442-2446

Giant enhancement of the carrier mobility in silicon nanowires with diamond coating

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND COATING; HEAT CONDUCTOR; NANOELECTRONIC DEVICES; NANOWIRES;

EID: 33846134083     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl061554o     Document Type: Article
Times cited : (89)

References (32)
  • 18
    • 33846128071 scopus 로고    scopus 로고
    • Inverse electron effective mass for thin Si nanowires was calculated as the directional average of inverse electron effective masses for bulk Si, which resulted in m, 0.26m0
    • 0.
  • 23
    • 33846160897 scopus 로고    scopus 로고
    • The screening of charged impurities by electrons is not taken into account; the screening reduces electron-impurity scattering and increases low-temperature electron mobility
    • The screening of charged impurities by electrons is not taken into account; the screening reduces electron-impurity scattering and increases low-temperature electron mobility.
  • 32


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.