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Applied Physics Express

Volumn 3, Issue 7, 2010, Pages

Improvement of external quantum efficiency in InGaN-based double-heterostructure light-emitting diodes

(4) Lai, Mu Jen a Chang, Liann Be a Lin, Ray Ming a Huang, Chou Shuang a

a CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALGAN; BAND GAP RENORMALIZATION; DOUBLE HETEROSTRUCTURES; EXTERNAL QUANTUM EFFICIENCY; INTERFACE STATE; P-TYPE; PEAK WAVELENGTH; RED-SHIFT PHENOMENA;

ELECTROLUMINESCENCE; LIGHT EMITTING DIODES;

QUANTUM EFFICIENCY;

EID: 77954507821 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.072102 Document Type: Article

Times cited : (6)

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