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Japanese Journal of Applied Physics

Volumn 49, Issue 11, 2010, Pages

Analysis of time-resolved photoluminescence of InGaN quantum wells using the carrier rate equation

(4) Kim, Hyunsung a Shin, Dong Soo a Ryu, Han Youl b Shim, Jong In a

a Hanyang University (South Korea)

b Inha University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS MODELS; CARRIER RATE EQUATION; INGAN QUANTUM WELLS; INTERNAL QUANTUM EFFICIENCY; MEASUREMENT METHODS; MEASUREMENT RESULTS; NON-RADIATIVE; NON-RADIATIVE RECOMBINATIONS; PHYSICAL MEANINGS; QUANTUM WELL STRUCTURES; ROOM TEMPERATURE; TIME-RESOLVED PHOTOLUMINESCENCE;

PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS;

CARRIER LIFETIME;

EID: 79551648746 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.112402 Document Type: Article

Times cited : (31)

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