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Journal of Applied Physics

Volumn 109, Issue 9, 2011, Pages

The investigation on carrier distribution in InGaN/GaN multiple quantum well layers

(9) Zhu, J H a Zhang, S M a Wang, H a Zhao, D G a Zhu, J J a Liu, Z S a Jiang, D S a Qiu, Y X b Yang, H a,b

a INSTITUTE OF SEMICONDUCTORS (China)

b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DISTRIBUTIONS; ELECTRICALLY INJECTED; ELECTROLUMINESCENCE SPECTRUM; EMISSION PEAKS; HOLE RECOMBINATION; HOLE TRANSPORTS; INGAN/GAN; LOW TEMPERATURE PHOTOLUMINESCENCE; RECOMBINATION DYNAMICS; SPATIALLY RESOLVED;

ELECTROLUMINESCENCE; GALLIUM NITRIDE; HOLE MOBILITY; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79959529122 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3587176 Document Type: Article

Times cited : (26)

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