Dependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film

Journal of Applied Physics

Volumn 110, Issue 11, 2011, Pages

  Kim, Hyo Kyeom ^a   Jung, Hyung Suk ^b   Jang, Jae Hyuck ^b   Park, Jinho ^b   Park, Tae Joo ^c   Lee, Seok Hee ^d   Hwang, Cheol Seong ^b  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

^c Hanyang University   (South Korea)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS-LIKE; ANNEALING TEMPERATURES; AS-DEPOSITED STATE; ATOMIC LAYER DEPOSITED; HF-SILICATE FILMS; HIGH TEMPERATURE; MONOCLINIC HFO; MONOCLINIC PHASE; POST DEPOSITION ANNEALING; SI CONCENTRATION; TETRAGONAL PHASE;

ATOMIC LAYER DEPOSITION; DEPOSITION; HAFNIUM; HAFNIUM OXIDES; PERMITTIVITY; PHASE SEPARATION; SILICON;

AMORPHOUS SILICON;

EID: 84859301126     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3665411     Document Type: Article

References (20)

1. S. Thompson, N. Anand, M. Armstrong, C. Auth, B. Arcot, M. Alavi, P. Bai, J. Bielefeld, R. Bigwood, J. Brandenburg, M. Buehler, S. Cea, V. Chikarmane, C. Choi, R. Frankovic, T. Ghani, G. Glass, W. Han, T. Hoffmann, M. Hussein, P. Jacob, A. Jain, C. Jan, S. Joshi, C. Kenyon, J. Klaus, S. Klopcic, J. Luce, Z. Ma, B. Mcintyre, K. Mistry, A. Murthy, P. Nguyen, H. Pearson, T. Sandford, R. Schweinfurth, R. Shaheed, S. Sivakumar, M. Taylor, B. Tufts, C. Wallace, P. Wang, C. Weber, and M. Bohr, Tech. Dig. - Int. Electron Devices Meet. 2002, p. 61.
2. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001). 10.1063/1.1361065
3. J. Robertson, Rep. Prog., Phys. 69, 327 (2006). 10.1088/0034-4885/69/2/ R02 (Pubitemid 43121643)
4. K. Kukli, T. Pilivi, M. Ritala, T. Sajavaara, J. Lu, and M. Leskela, Thin Solid Films 491, 328 (2005). 10.1016/j.tsf.2005.05.050 (Pubitemid 41344877)
5. K. Mistry, C. Allen, C. Auth, B. Beattie, D. Bergstrom, M. Bost, M. Brazier, M. Buehler, A. Cappellani, R. Chau, C.-H. Choi, G. Ding, K. Fischer, T. Ghani, R. Grover, W. Han, D. Hanken, M. Hattendorf, J. He, J. Hicks, R. Huessner, D. Ingerly, P. Jain, R. James, L. Jong, S. Joshi, C. Kenyon, K. Kuhn, K. Lee, H. Liu, J. Maiz, B. McIntyre, P. Moon, J. Neirynck, S. Pae, C. Parker, D. Parsons, C. Prasad, L. Pipes, M. Prince, P. Rarade, T. Reynolds, J. Sandford, L. Shifren, J. Sebastian, J. Seiple, D. Simon, S. Sivakumar, P. Smith, C. Thomas, T. Troeger, P. Vandervoorn, S. Williams, and K. Zawadzki, Tech. Dig.-Int. Electron Devices Meet. 2007, p. 247.
6. A.L.P. Rotondaro, M. R. Visokay, J. J. Chambers, A. Shanware, R. Khamankar, H. Bu, R. T. Laaksonen, L. Tsung, M. Douglas, R. Kuan, M. J. Bevan, T. Grider, J. McPherson, and L. Colombo, Dig. Tech. Pap.-Symp. VLSI Technol. 2002, p. 148.
7. M. Lemberger, A. Paskaleva, S. Zrcher, A. J. Bauer, L. Frey, and H. Ryssel, Microelectron. Reliab. 45, 819 (2005). 10.1016/j.microrel.2004.11.040 (Pubitemid 40309042)
8. J. Robertson, J. Vac. Sci. Technol. B. 18, 1785 (2000). 10.1116/1.591472
9. M. Chudzik, B. Doris, R. Mo, J. Sleight, E. Cartier, C. Dewan, D. Park, H. Bu, W. Natzle, W. Yan, C. Ouyang, K. Henson, D. Boyd, S. Callegari, R. Carter, D. Casarotto, M. Gribelyuk, M. Hargrove, W. He, Y. Kim, B. Linder, N. Moumen, V. K. Paruchuri, J. Stathis, M. Steen, A. Vayshenker, X. Wang, S. Zafar, T. Ando, R. Iijima, M. Takayanagi, V. Narayanan, R. Wise, Y. Zhang, R. Divakaruni, M. Khare, and T. C. Chen, Dig. Tech. Pap.-Symp. VLSI Technol., 2007, p. 194.
10. P. Packan, S. Akbar, M. Armstrong, D. Bergstrom, M. Brazier, H. Deshpande, K. Dev, G. Ding, T. Ghani, O. Golonzka, W. Han, J. He, R. Heussner, R. James, J. Jopling, C. Kenyon, S -H. Lee, M. Liu, S. Lodha, B. Mattis, A. Murthy, L. Neiberg, J. Neirynck, S. Pae, C. Parker, L. Pipes, J. Sebastian, J. Seiple, B. Sell, A. Sharma, S. Sivakumar, B. Song, A. St. Amour, K. Tone, T. Troeger, C. Weber, K. Zhang, Y. Luo, and S. Natarajan, Tech. Dig.-Int. Electron Devices Meet. 2009, p. 659.
11. T. J. Park, J. H. Kim, J. H. Jang, K. D. Na, C. S. Hwang, and J. H. Yoo, Electrochem. Sol. State. Lett. 11, 121 (2008). 10.1149/1.2844717 (Pubitemid 351394224)
12. K. Tomida and A. Toriumi, Appl. Phys. Lett. 89, 142902 (2005). 10.1063/1.2355471
13. D. A. Neumayer and E. Cartier, J. Appl. Phys. 90, 1801 (2001). 10.1063/1.1382851
14. C. K. Lee, E. Cho, H. -S. Lee, C. S. Hwang, and S. Han, Phys. Rev. B 78, 012102 (2008). 10.1103/PhysRevB.78.012102
15. T. J. Park, J. H. Kim, J. H. Jang, C. -K. Lee, K. D. Na, S. Y. Lee, H. -S. Jung, M. Kim, S. Han, and C. S. Hwang, Chem. Mater. 22, 4175 (2010). 10.1021/cm100620x
16. H.-S. Jung, J. H. Jang, D.-Y. Cho, S.-H. Jeon, H. K. Kim, S. Y. Lee, and C. S. Hwang, Electrochem. Sol. State. Lett. 14, 17 (2011). 10.1149/1.3551460
17. D. Triyoso, R. Liu, D. Roan, M. Ramon, N. V. Edwards, R. Gregory, D. Werho, J. Kulik, G. Tam, E. Irwin, X.-D. Wang, L. B. La, C. Hobbs, R. Garcia, J. Baker, B. E. White, and P. Tobina, J. Electrochem. Soc. 151, F220 (2004). 10.1149/1.1784821
18. K. Chang, K. Shanmugasundaram, J. Shallenberger, and J. Ruzyllo, Thin Solid Films 515, 3802 (2007). 10.1016/j.tsf.2006.09.048 (Pubitemid 46240156)
19. H. Jin, S. K. Oh, H. J. Kang, and M. -H. Cho, Appl. Phys. Lett. 89, 122901 (2006). 10.1063/1.2355453 (Pubitemid 44439815)
20. Y.-C. Yeo, T.-J. King, and C. Hu, Appl. Phys. Lett. 81, 2091 (2002). 10.1063/1.1506941