Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications

Thin Solid Films

Volumn 515, Issue 7-8, 2007, Pages 3802-3805

  Chang, K ^a   Shanmugasundaram, K ^a   Shallenberger, J ^b   Ruzyllo, J ^a  

^a The Pennsylvania State University   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Deposition process; Dielectrics; Hafnium; Metal oxide semiconductor (MOS) structure

Indexed keywords

DEPOSITION; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOS DEVICES; PERMITTIVITY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPOSITION PROCESS; METAL-OXIDE-SEMICONDUCTOR (MOS) STRUCTURE; PHYSICAL THICKNESS;

DIELECTRIC MATERIALS;

EID: 33846920892     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.09.048     Document Type: Article

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