Formation and modification of Schottky barriers at the PZT/Pt interface

Journal of Physics D: Applied Physics

Volumn 42, Issue 21, 2009, Pages

  Chen, Feng ^a   Schafranek, Robert ^a   Wu, Wenbin ^b   Klein, Andreas ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT TEMPERATURES; BARRIER HEIGHTS; CONTAMINATION-FREE; DEVICE OPERATIONS; IN-SITU; IN-VACUUM; OXYGEN PRESSURE; PB(ZR ,TI)O; PT DEPOSITION; RESIDUAL GAS; ROOM TEMPERATURE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SUBSTRATE SURFACE; THIN FILM SURFACES; VALENCE-BAND MAXIMUMS;

ELECTRIC CURRENTS; FERMI LEVEL; FERMIONS; LEAD; OXYGEN; PHOTOELECTRON SPECTROSCOPY; PLATINUM; SCHOTTKY BARRIER DIODES; THIN FILMS; ZIRCONIUM;

GAS PERMEABLE MEMBRANES;

EID: 70450178710     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/21/215302     Document Type: Article

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