SiC seed polarity-dependent bulk AlN growth under the influence of residual oxygen

Journal of Crystal Growth

Volumn 344, Issue 1, 2012, Pages 19-26

  Hartmann, Carsten ^a   Albrecht, Martin ^a   Wollweber, Jürgen ^a   Schuppang, Josephine ^a   Juda, Uta ^a   Guguschev, Christo ^a   Golka, Sebastian ^a   Dittmar, Andrea ^a   Fornari, Roberto ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

A1. Growth models; A2. Growth from vapor; A2. Seed crystals; A2. Single crystal growth; B1. Nitrides

Indexed keywords

A2. GROWTH FROM VAPOR; A2. SEED CRYSTALS; ALN; BULK ALN; CRYSTAL QUALITIES; ETCH PIT DENSITY; GROWTH MODELS; GROWTH MODES; GROWTH STAGES; HEATING UP; ISLAND GROWTH; MOSAICITY; OFF-AXIS; ORDERS OF MAGNITUDE; RESIDUAL OXYGEN; ROCKING CURVE WIDTH;

EPITAXIAL GROWTH; NITRIDES; SILICON; SINGLE CRYSTALS; THREE DIMENSIONAL; VAPORS;

SILICON CARBIDE;

EID: 84858079725     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.01.045     Document Type: Article

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