Large-area AlN substrates for electronic applications: An industrial perspective

Journal of Crystal Growth

Volumn 310, Issue 17, 2008, Pages 4020-4026

  Bondokov, Robert T ^a   Mueller, Stephan G ^a   Morgan, Kenneth E ^a   Slack, Glen A ^a   Schujman, Sandra ^a   Wood, Mark C ^b   Smart, Joseph A ^a   Schowalter, Leo J ^a  

^a Crystal IS Inc   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

A1. Substrates; A2. Growth from vapor; A3. Organometallic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

CRYSTALLOGRAPHY; RESISTORS; SUBSTRATES;

A1. SUBSTRATES; A2. GROWTH FROM VAPOR; A3. ORGANOMETALLIC VAPOR PHASE EPITAXY; ALN SUBSTRATES; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS; B3. LIGHT EMITTING DIODES; BULK CRYSTALS; COMMERCIAL PRODUCTIONS; ELECTRONIC APPLICATIONS; ETCH PIT DENSITY; HIGH-QUALITY; RE-CONDENSATION; ROCKING CURVES; SUBSTRATE ORIENTATIONS; VAPOR GROWTH;

FULL WIDTH AT HALF MAXIMUM;

EID: 49449101252     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.032     Document Type: Article

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