Seeded growth of AlN on (0001)-plane 6H-SiC substrates

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 983-986

  Filip, O ^a   Epelbaum, B M ^a   Bickermann, M ^a   Heimann, P ^a   Nagata, S ^b   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b JFE Mineral Company Ltd   (Japan)

Author keywords

Aluminum nitride; Crystal quality; Growth morphology

Indexed keywords

CRACKS; III-V SEMICONDUCTORS; MICROWAVE DEVICES; MICROWAVES; MORPHOLOGY; NITRIDES; SILICON CARBIDE; SUBSTRATES;

ALUMINUM NITRIDE (ALN); CRYSTAL QUALITIES; GROWTH MORPHOLOGY; HIGH POWER MICROWAVE DEVICES; OPTIMUM THICKNESS; PHYSICAL VAPOR TRANSPORT; STRUCTURAL QUALITIES; SUBSTRATE MATERIAL;

ALUMINUM NITRIDE;

EID: 77955666430     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.983     Document Type: Conference Paper

References (7)

1. S. Shujman, L. J. Schowalter, W. Liu, and J. A. Smart: Proc. SPIE (2006), p. 61210.
2. H. Helava, S. J. Davis et al.: Phys. Status Solidi C Vol. 4 (2007), p. 2281 doi:10.1002/pssc.200674897.
3. Z. G. Herro, D. Zhuang, R. Schlesser, R. Collazo, and Z. Sitar: MRS Symposium Proceedings Vol. 892, Pittsburgh, USA (2006), p. 499.
4. B. M. Epelbaum, M. Bickermann, S. Nagata, P. Heimann, O. Filip, and A. Winnacker: J. Cryst. Growth Vol. 305 (2007), p. 317 doi:10.1016/j.jcrysgro.2007. 04.008. (Pubitemid 47016521)
5. Yu. N. Makarov, O. V. Avdeev, I. S. Barash et al.: J. Cryst. Growth Vol. 310 (2008), p. 881 doi:10.1016/j.jcrysgro.2007.11.059.
6. O. Filip, B. M. Epelbaum, M. Bickermann, A. Winnacker: Mater. Sci. Forum Vol. 556-557 (2007), p. 17 doi:10.4028/www.scientific.net/MSF.556-557.17.
7. M. Bickermann, S. Schmidt, B. M. Epelbaum, P. Heimann, S. Nagata, A. Winnacker: J. Cryst. Growth Vol. 300 (2007), p. 299 doi:10.1016/j.jcrysgro.2006. 12.037. (Pubitemid 46386049)