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Volumn 312, Issue 19, 2010, Pages 2699-2704

AlN bulk single crystal growth on 6H-SiC substrates by sublimation method

(7) Nagai, Ichiro a Kato, Tomohisa a Miura, Tomonori a Kamata, Hiroyuki b Naoe, Kunihiro b Sanada, Kazuo b Okumura, Hajime a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b FUJIKURA LTD (Japan)

Author keywords

A2. Growth from vapor; A2. Single crystal growth; B1. Nitrides

Indexed keywords

ALN; ALN SINGLE CRYSTALS; B1. NITRIDES; BULK SINGLE CRYSTALS; CRYSTAL QUALITIES; CRYSTAL THICKNESS; ETCH PIT DENSITY; GROWTH FROM VAPORS; IMPURITY PHASIS; POLYTYPES; RAMAN SPECTRUM; SIC SUBSTRATES; SIC(0 0 0 1); TYPE STRUCTURES; WURTZITES; X RAY ROCKING CURVE;

CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRON ENERGY LEVELS; NITRIDES; RAMAN SPECTROSCOPY; SILICON CARBIDE; SUBLIMATION; VAPORS; ZINC SULFIDE;

SINGLE CRYSTALS;

EID: 77956182343 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.05.044 Document Type: Article

Times cited : (42)

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