Single crystal growth of AIN by sublimation method

SEI Technical Review

Volumn , Issue 63, 2006, Pages 22-26

  Miyanaga, Michimasa ^a   Mizuhara, Naho ^a   Fujiwara, Shinsuke ^a   Shimazu, Mitsuru ^a   Nakahata, Hideaki ^a   Kawase, Tomohiro ^a  

^a Semiconductor Technologies R and D Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; ETCH PIT DENSITY (EPD); ROCKING CURVES;

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); SILICON CARBIDE; SINGLE CRYSTALS; SUBLIMATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ALUMINUM NITRIDE;

EID: 33846027138     PISSN: 13434349     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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7. L. Liu, J.H. Edgar, S. Rajasingam and M. Kuball, "Raman characterization and stress analysis of AlN grown on SiC by sublimation", J. Appl. Phys. Vol. 92, No. 9 (2002) 5183