Characterization of a freestanding AlN substrate prepared by hydride vapor phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1512-1514

  Kumagai, Y ^a   Nagashima, T ^b   Murakami, H ^a   Takada, K ^b   Koukitu, A ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b TOKUYAMA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL-POLARITY; ALN LAYERS; ALN SUBSTRATES; ALN-LAYER GROWN; CHEMICAL ETCHANTS; CRYSTALLINE QUALITY; HYDRIDE VAPOR PHASE EPITAXY; KOH SOLUTION; NEAR BAND EDGE EMISSIONS; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SI SUBSTRATES; THICK LAYERS; TOP SURFACE;

CRYSTAL GROWTH; NITRIDES; RESISTORS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; VAPOR PHASE EPITAXY; VAPORS;

SUBSTRATES;

EID: 77951243070     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778432     Document Type: Conference Paper

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