Freestanding AlN single crystals enabled by self-organization of 2H-SiC pyramids on 4H-SiC substrates

Applied Physics Letters

Volumn 94, Issue 8, 2009, Pages

  Yazdi, G R ^a   Beckers, M ^a   Giuliani, F ^a   Syvajarvi M ^a   Hultman, L ^a   Yakimova, R ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; DISLOCATIONS (CRYSTALS); SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES;

4H-SIC SUBSTRATES; ALN; ALN SINGLE CRYSTALS; DISLOCATION DENSITIES; HIGH GROWTH RATES; HIGH QUALITIES; MICRO RODS; PROCESS YIELDS; RE CONDENSATIONS; SELF ORGANIZATIONS; TEMPERATURE RAMPS; THERMAL ETCHINGS;

SINGLE CRYSTALS;

EID: 61349094600     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3085958     Document Type: Article

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