Model for the influence of boron impurities on the morphology of AlN grown by physical vapor transport

Surface Science

Volumn 560, Issue 1-3, 2004, Pages

  Brenner, D W ^a   Schlesser, R ^a   Sitar, Z ^a   Dalmau, R ^a   Collazo, R ^a   Li, Y ^a  

^a North Carolina State University   (United States)

Author keywords

Boron; Growth; Nitrides; Surface structure, morphology, roughness, and topography

Indexed keywords

BINDING ENERGY; BORON; COMPUTER SIMULATION; CRYSTAL GROWTH; CRYSTAL LATTICES; CRYSTALLOGRAPHY; DIFFUSION; MORPHOLOGY; PHYSICAL VAPOR DEPOSITION; SUBLIMATION;

MOLECULAR STATICS CALCULATIONS; PHYSICAL VAPOR TRANSPORT; SURFACE STRUCTURE, MORPHOLOGY, ROUGHNESS, AND TOPOGRAPHY;

ALUMINUM NITRIDE;

EID: 2942542799     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.05.003     Document Type: Article

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