Sublimation growth of 2 inch diameter bulk AlN crystals

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1612-1614

  Chemekova, T Yu ^a   Avdeev, O V ^a   Barash, I S ^a   Mokhov, E N ^a   Nagalyuk, S S ^a   Roenkov, A D ^a   Segal, A S ^a   Makarov, Yu N ^a,b   Ramm, M G ^b   Davis, S ^b   Huminic, G ^b   Helava, H ^b  

^a Nitride Crystals Ltd   (Russian Federation)

^b The Fox Group Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; BULK ALN; BULK CRYSTALS; CRYSTALLOGRAPHIC QUALITY; IMPURITIES IN; POLYCRYSTALLINE; SEMI-INSULATING; SUBLIMATION GROWTH; TWO STAGE;

NITRIDES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS; SUBLIMATION; TANTALUM; TUNGSTEN;

CRYSTAL IMPURITIES;

EID: 67649461454     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778534     Document Type: Conference Paper

References (3)

1. G. A. Slack and T. F. McNelly, J. Cryst. Growth 34, 263 (1977).
2. B. Raghothamachar, M. Dudley, J. C. Rojo, K. Morgan, and L. J. Schowalter, J. Cryst. Growth 250, 244 (2003).
3. E. N. Mokhov, O. V. Avdeev, I. S. Barash, T. Yu. Chemekova, A. D. Roenkov, A. S. Segal, A. A. Wolfson, Yu. N. Makarov, M. G. Ramm, and H. Helava, J. Cryst. Growth 281, 93 (2005).