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Volumn 310, Issue 5, 2008, Pages 930-934

Homoepitaxial seeding and growth of bulk AlN by sublimation

Author keywords

A2.Growth from vapor; B1.Nitride; B2.Semiconducting III V materials

Indexed keywords

ALUMINUM COMPOUNDS; EPITAXIAL GROWTH; GROWTH RATE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SUBLIMATION;

COLUMNAR STRUCTURE; ELECTRON BACK-SCATTER DIFFRACTION (EBSD); HOMOEPITAXIAL SEEDING; INDUCTIVELY HEATED REACTOR;

SINGLE CRYSTALS;

EID: 39249084133 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2007.11.136 Document Type: Article

Times cited : (39)

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