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Volumn 4, Issue 7, 2007, Pages 2211-2214
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Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen
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Author keywords
[No Author keywords available]
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Indexed keywords
ALN LAYERS;
CATHODE LUMINESCENCE;
CRYSTALLINITY;
INDUCTIVE HEATING;
LOW GROWTH TEMPERATURES;
NITRIDE SEMICONDUCTORS;
SIC SUBSTRATES;
SINGLE CRYSTALLINE LAYERS;
SOLUTION GROWTH;
SOLUTION GROWTH TECHNIQUE;
TEM OBSERVATIONS;
ATMOSPHERIC PRESSURE;
ATMOSPHERICS;
CLIMATOLOGY;
COPPER;
COPPER ALLOYS;
CRYSTALLOGRAPHY;
CRYSTALS;
ECOLOGY;
ELECTRIC CONDUCTIVITY;
EPITAXIAL GROWTH;
METEOROLOGY;
MOLECULAR BEAM EPITAXY;
NITRIDES;
NITROGEN;
NONMETALS;
POWDERS;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR MATERIALS;
SILICON CARBIDE;
SINGLE CRYSTALS;
SOLVENTS;
SUBSTRATES;
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EID: 49749087961
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200674718 Document Type: Conference Paper |
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Times cited : (32)
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References (5)
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