Single-crystal growth of aluminum nitride on 6H-SiC substrates by an open-system sublimation method

Journal of Crystal Growth

Volumn 311, Issue 5, 2009, Pages 1291-1295

  Kamata, Hiroyuki ^a   Naoe, Kunihiro ^a   Sanada, Kazuo ^a   Ichinose, Noboru ^b  

^a FUJIKURA LTD   (Japan)

^b WASEDA UNIVERSITY   (Japan)

Author keywords

A2. Growth from vapor; A2. Single crystal growth; B1. Aluminum nitride

Indexed keywords

ALUMINA; ALUMINUM; ALUMINUM NITRIDE; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; NITRIDES; ORE TREATMENT; SILICON CARBIDE; SUBLIMATION; SUBSTRATES; SULFUR COMPOUNDS; SUPERSATURATION; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

A2. GROWTH FROM VAPOR; A2. SINGLE-CRYSTAL GROWTH; ALN; ALN SINGLE CRYSTALS; B1. ALUMINUM NITRIDE; CRYSTAL LAYERS; CRYSTAL SURFACES; CRYSTALLINE QUALITIES; DISLOCATION DENSITIES; ETCH PIT DENSITIES; OFF-AXIS; PRECISE CONTROLS; SIC SUBSTRATES; SIC(0 0 0 1); SINGLE-CRYSTALLINE; TRANSMISSION ELECTRON MICROSCOPY OBSERVATIONS;

SINGLE CRYSTALS;

EID: 61449250522     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.12.025     Document Type: Article

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