Structural and photoluminescence investigation on the hot-wire assisted plasma enhanced chemical vapor deposition growth silicon nanowires

Journal of Luminescence

Volumn 132, Issue 6, 2012, Pages 1345-1352

  Chong, Su Kong ^a   Goh, Boon Tong ^a   Wong, Yuen Yee ^c   Nguyen, Hong Quan ^c   Do, Hien ^c   Ahmad, Ishaq ^d,e   Aspanut, Zarina ^a   Muhamad, Muhamad Rasat ^a   Dee, Chang Fu ^b   Rahman, Saadah Abdul ^a  

^a UNIVERSITY OF MALAYA   (Malaysia)

^b INSTITUTE OF MICROENGINEERING AND NANOELECTRONICS IMEN   (Malaysia)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d SHANGHAI INSTITUTE OF APPLIED PHYSICS   (China)

^e QUAID I AZAM UNIVERSITY   (Pakistan)

Author keywords

Hot wire assisted plasma enhanced chemical vapor deposition; Photoluminescence; Silicon nanowires; Structural

Indexed keywords

ABSORPTION AND PHOTOLUMINESCENCE; AMORPHOUS SI; AS-GROWN; CRYSTAL VOLUME; CRYSTALLINE STRUCTURE; HIGH DENSITY; HIGH ENERGY REGIONS; NANOCRYSTALLINE SI; NEAR-IR; PHOTOLUMINESCENCE INVESTIGATION; RED EMISSIONS; RF-POWER; SILICON NANOWIRES; STRUCTURAL; STRUCTURAL AND OPTICAL PROPERTIES; THIN LAYERS;

CHEMICAL VAPOR DEPOSITION; LIGHT ABSORPTION; NANOWIRES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON COMPOUNDS; SILICON OXIDES; VAPORS; WIRE;

AMORPHOUS SILICON;

EID: 84857973857     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2012.01.026     Document Type: Article

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