Effect of oxide thickness on the low temperature (≤400 °c) growth of cone-shaped silicon nanowires

Journal of Applied Physics

Volumn 102, Issue 4, 2007, Pages

  Jung, Yang Gyoo ^a   Jee, Sang Won ^a   Lee, Jung Ho ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; NANOWIRES; SILICON; THICKNESS MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

INTEGRATION INTENSITY; NANOWIRE GROWTH;

SEMICONDUCTOR GROWTH;

EID: 34548430152     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2769267     Document Type: Article

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