SCOPUS 정보 검색 플랫폼

IOP Conference Series: Materials Science and Engineering

Volumn 6, Issue , 2009, Pages

Fabrication of polycrystalline silicon nanowires using conventional UV lithography

(4) Demami, F a Pichon, L a Rogel, R a Salaun A C a

a UNIVERSITÉ DE RENNES 1 (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURVATURE RADII; ETCHING RATE; HIGH TEMPERATURE; LOW PRESSURE CHEMICAL VAPOUR DEPOSITIONS; NANOMETRIC SIZE; OPTICAL LIMITS; POLY-CRYSTALLINE SILICON; POLYSILICON LAYERS; POLYSILICON NANOWIRES; SIDEWALL SPACER; SILICON NANOWIRES; THERMAL ACTIVATION; THERMALLY ACTIVATED; UV LITHOGRAPHY; UV LITHOGRAPHY TECHNIQUES;

LITHOGRAPHY; NANOWIRES; OPTOELECTRONIC DEVICES; POLYSILICON; SILICON COMPOUNDS; SILICON OXIDES;

ANISOTROPIC ETCHING;

EID: 84893441634 PISSN: 17578981 EISSN: 1757899X Source Type: Conference Proceeding
DOI: 10.1088/1757-899X/6/1/012014 Document Type: Conference Paper

Times cited : (22)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.