Effect of rf power on the growth of silicon nanowires by hot-wire assisted plasma enhanced chemical vapor deposition (HW-PECVD) technique

Thin Solid Films

Volumn 519, Issue 15, 2011, Pages 4933-4939

  Chong, Su Kong ^a   Goh, Boon Tong ^a   Aspanut, Zarina ^a   Muhamad, Muhamad Rasat ^a   Dee, Chang Fu ^b   Rahman, Saadah Abdul ^a  

^a UNIVERSITY OF MALAYA   (Malaysia)

^b INSTITUTE OF MICROENGINEERING AND NANOELECTRONICS IMEN   (Malaysia)

Author keywords

HRTEM; HW PECVD; Raman; Rf power; Silicon nanowires

Indexed keywords

DEPOSITION; ITO GLASS; NANOCRYSTALS; NANOWIRES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SUBSTRATES; VAPOR DEPOSITION; WIRE;

COATED GLASS SUBSTRATES; HRTEM; NANO-CRYSTALLINE STRUCTURES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD); RAMAN; RF-POWER; SILICON NANOWIRES; SIMULTANEOUS EVAPORATION;

PLASMA CVD;

EID: 79957639752     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.056     Document Type: Article

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