Electronic structure and optical properties of silicon nanowires: A study using x-ray excited optical luminescence and x-ray emission spectroscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 4, 2004, Pages

  Sham, T K ^a   Naftel, S J ^a   Kim, P S G ^a   Sammynaiken, R ^a   Tang, Y H ^a   Coulthard, I ^b   Moewes, A ^c   Freeland, J W ^d   Hu, Y F ^e   Lee, S T ^f  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b CANADIAN LIGHT SOURCE INC   (Canada)

^c UNIVERSITY OF SASKATCHEWAN   (Canada)

^d ARGONNE NATIONAL LABORATORY   (United States)

^e UNIVERSITY OF WISCONSIN MADISON   (United States)

^f CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDE; SILICON;

ARTICLE; CHEMICAL STRUCTURE; CRYSTAL STRUCTURE; FLAME PHOTOMETRY; LUMINESCENCE; MOLECULAR DYNAMICS; PARTICLE SIZE; QUANTUM MECHANICS; X RAY ANALYSIS;

EID: 42749102499     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.045313     Document Type: Article

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