Synthesis and photoluminescence properties of silicon nanowires treated by high-pressure water vapor annealing

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 5, 2007, Pages 1302-1306

  Salhi, B ^a   Gelloz, B ^b   Koshida, N ^b   Patriarche, G ^c   Boukherroub, R ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^c UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-PRESSURE WATER VAPOR ANNEALING (HWA); PHOTOLUMINESCENCE PROPERTIES; SILICON NANOWIRES; VAPORLIQUID-SOLID (VLS) TECHNIQUE;

ANNEALING; CATALYSTS; NANOWIRES; PHOTOLUMINESCENCE SPECTROSCOPY; SYNTHESIS (CHEMICAL); WATER VAPOR;

NANOCRYSTALLINE SILICON;

EID: 34547236208     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200674321     Document Type: Article

References (18)

1. A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82(3), 909 (1997).
2. O. Bisi, S. Ossicini, and L. Pavesi, Surf. Sci. Rep. 38(1-3), 5 (2000).
3. B. Gelloz and N. Koshida, in: The Handbook of Electroluminescent Materials, edited by D. R. Vij (Institute of Physics Publishing, Bristol and Philadelphia, 2004), chap. 10, pp. 393-475.
4. N. Koshida and B. Gelloz, Curr. Opin. Colloid Interface Sci. 4(4), 309 (1999).
5. H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida, Nature 400(6747), 853 (1999).
6. M. P. Schwartz, F. Cunin, R. W. Cheung, and M. J. Sailor, phys. stat. sol. (a) 202(8), 1380 (2005).
7. J. L. Coffer, M. A. Whitehead, D. K. Nagesha, P. Mukherjee, G. Akkaraju, M. Totolici, R. S. Saffie, and L. T. Canham, phys. stat. sol. (a) 202(8), 1451 (2005).
8. B. Gelloz, A. Kojima, and N. Koshida, Appl. Phys. Lett. 87(3), 031107 (2005).
9. B. Gelloz and N. Koshida, J. Appl. Phys. 98(1), 123509 (2005).
10. J. Hu, T. W. Odom, and C. M. Lieber, Acc. Chem. Res. 32, 435 (1999).
11. C. N. R. Rao, F. L. Deepak, G. Gundiah, and A. Govindaraj, Prog. Solid State Chem. 31, 5-147 (2003).
12. S. T. Lee, N. Wang, and C. S. Lee, Mater. Sci. Eng. A 286, 16 (2000).
13. D. P. Yu, Q. L. Hang, Y. Ding, H. Z. Zhang, Z. G. Bai, J. J. Wang, Y. H. Zou, W. Qian, G. C. Xiong, and S. Q. Feng, Appl. Phys. Lett. 73, 3076 (1998).
14. Z. G. Bai, D. P. Yu, J. J. Wang, Y. H. Zou, W. Qian, J. S. Fu, S. Q. Feng, J. Xu, and L. P. You, Mater. Sci. Eng. B 72, 117(2000).
15. N. Ozaki, Y. Ohno, and S. Takeda, Mater. Res. Soc. Symp. Proc. 588, 99 (2000).
16. B. Salhi, B. Grandidier, and R. Boukherroub, J. Electroceram. 16, 15-21 (2006).
17. T. Takagahara and K. Takeda, Phys. Rev. B 46, 15578 (1992).
18. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. 82(1), 197 (1999).