Correlating Raman-spectroscopy and high-resolution transmission-electron-microscopy studies of amorphous/nanocrystalline multilayered silicon thin films

Thin Solid Films

Volumn 517, Issue 18, 2009, Pages 5453-5458

  Gajović, Andreja ^a,b   Gracin, Davor ^a   Juraić, Krunoslav ^a   Sancho Parramon, Jordi ^a   Čeh, Miran ^b  

^a RUDER BO KOVI INSTITUTE   (Croatia)

^b JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

Electron microscopy; Nanostructures; Raman scattering; Silicon

Indexed keywords

AMORPHOUS MATRICES; AVERAGE SIZE; BIMODAL DISTRIBUTION; CONFINEMENT EFFECTS; CRYSTAL SIZE; CRYSTALLINE FRACTIONS; HIGH RESOLUTION; MEAN SQUARE VALUES; MULTI-LAYERED; SILICON THIN FILM;

CRYSTALLINE MATERIALS; CRYSTALLITE SIZE; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; ELECTRONS; NANOCRYSTALLINE SILICON; NANOCRYSTALS; OPTICAL PROPERTIES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RAPID SOLIDIFICATION; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 65649086101     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.086     Document Type: Article

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