Fabrication and photoluminescence properties of silicon nanowires with thin surface oxide layers

Materials Chemistry and Physics

Volumn 118, Issue 1, 2009, Pages 125-128

  Shi, Fengjun ^a   Lin, Jing ^a   Huang, Yang ^a   Zhang, Jun ^a   Tang, Chengchun ^a  

^a CENTRAL CHINA NORMAL UNIVERSITY   (China)

Author keywords

Electron microscopy; Luminescence; Nanostructures; Surfaces

Indexed keywords

AMORPHOUS BORON; AMORPHOUS OXIDE LAYERS; BORON POWDER; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; GROWTH MECHANISMS; NANO SCALE; PHOTOLUMINESCENCE INVESTIGATION; PHOTOLUMINESCENCE PROPERTIES; POTENTIAL APPLICATIONS; RED EMISSION BAND; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; SI NANOWIRE; SILICON NANOWIRES; SINGLE-CRYSTALLINE; THIN SURFACES;

AMORPHOUS SILICON; AUGER ELECTRON SPECTROSCOPY; BORON; BORON COMPOUNDS; ELECTRIC WIRE; ELECTRONS; ENERGY DISSIPATION; LIGHT; LIGHT EMISSION; NANOWIRES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SILICON; SILICON COMPOUNDS; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 70349776072     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2009.07.015     Document Type: Article

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