Optical properties of boron-doped Si nanowires

Journal of Crystal Growth

Volumn 265, Issue 1-2, 2004, Pages 94-98

  Zeng, X B ^a   Liao, X B ^a   Wang, B ^b   Dai, S T ^b   Xu, Y Y ^a   Xiang, X B ^a   Hu, Z H ^a   Diao, H W ^a   Kong, G L ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

A3. Chemical vapor deposition processes; B1. Nanomaterials; B2. Semiconducting silicon

Indexed keywords

BORON; CATALYSIS; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

NANOMATERIALS; ROOM TEMPERATURE;

SEMICONDUCTING SILICON;

EID: 1842422901     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.01.053     Document Type: Article

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