Effect of interface buffer layer on the reliability of ultra-thin MGO magnetic tunnel junctions for spin transfer switching MRAM

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 650-651

  Hosotani, Keiji ^a   Asao, Yoshiaki ^a   Nagamine, Makoto ^a   Ueda, Tomomasa ^a   Aikawa, Hisanori ^a   Shimomura, Naoharu ^a   Ikegawa, Sumio ^a   Kajiyama, Takeshi ^a   Takahashi, Shigeki ^a   Nitayama, Akihiro ^a   Yoda, Hiroaki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNESIA; MAGNETIC DEVICES; MAGNETORESISTANCE; RANDOM ACCESS STORAGE; SWITCHING; TUNNEL JUNCTIONS;

MAGNETIC TUNNEL JUNCTIONS; MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM); RESISTANCE DRIFT; SPIN TRANSFER;

BUFFER LAYERS;

EID: 34548709097     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369995     Document Type: Conference Paper

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