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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 16-19, 2005, Pages

Dependence of giant tunnel magnetoresistance of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions on MgO barrier thickness and annealing temperature

(5) Hayakawa, Jun a,b Ikeda, Shoji b Matsukura, Fumihiro b Takahashi, Hiromasa a,b Ohno, Hideo b

a HITACHI LTD (Japan)

b TOHOKU UNIVERSITY (Japan)

Author keywords

CoFeB; Crystallization; Magnetic tunnel junction; MgO barrier; Tunnel magnetoresistance effect

Indexed keywords

ANNEALING; COBALT COMPOUNDS; CRYSTALLIZATION; ELECTRODES; MAGNESIA; MAGNETORESISTANCE; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING TEMPERATURE; MAGNETIC TUNNEL JUNCTIONS; MGO BARRIER;

TUNNEL JUNCTIONS;

EID: 28844464505 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.L587 Document Type: Article

Times cited : (248)

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