Highly-scalable disruptive reading scheme for Gb-scale SPRAM and beyond

2010 IEEE International Memory Workshop, IMW 2010

Volumn , Issue , 2010, Pages

  Takemura, R ^a   Kawahara, T ^a   Ono, K ^a   Miura, K ^a,b   Matsuoka, H ^a   Ohno, H ^b  

^a HITACHI LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Disruptive reading; MRAM; Restoring and TMR; SPRAM

Indexed keywords

DISRUPTIVE READING; ERROR RATE; FREE LAYERS; HIGH SPEED; HIGH-DENSITY; LARGE CURRENT; MRAM; RESTORING AND TMR; SPIN TRANSFER TORQUE; SPRAM; TMR DEVICE;

DYNAMIC RANDOM ACCESS STORAGE;

MAGNETIC STORAGE;

EID: 77957930077     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2010.5488324     Document Type: Conference Paper

References (5)

1. M. Hosomi et al., IEDM, pp. 459-462, Dec. 2005.
2. T. Kawahara et al., JSSC, pp. 109-120. 2008.
3. K. Ono et al., IEDM, pp. 219-222, Dec. 2009.
4. R. Takemura et al., NVSMW/ICMTD, pp. 54-56 2008.
5. R. Takemura et al., Symp. VLSI Ckt. pp. 84-85, 2009.