Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeBMgOCoFeB pseudo-spin-valves annealed at high temperature

Applied Physics Letters

Volumn 93, Issue 8, 2008, Pages

  Ikeda, S ^a   Hayakawa, J ^b   Ashizawa, Y ^a   Lee, Y M ^a,c   Miura, K ^a,b,d   Hasegawa, H ^a,b   Tsunoda, M ^a   Matsukura, F ^a   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

^c NIHON UNIVERSITY   (Japan)

^d FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT COMPOUNDS; ELECTRIC RESISTANCE; MAGNETOELECTRONICS; MAGNETORESISTANCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON; SPIN DYNAMICS; TUNNEL JUNCTIONS; TUNNELS; VALVES (MECHANICAL);

HIGH TEMPERATURE; MAGNETIC TUNNEL JUNCTION; TUNNEL MAGNETORESISTANCE;

TANTALUM;

EID: 51349167171     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2976435     Document Type: Article

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