On-axis scheme and novel MTJ structure for sub-30nm Gb density STT-MRAM

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Oh, S C ^a   Jeong, J H ^a   Lim, W C ^a   Kim, W J ^a   Kim, Y H ^a   Shin, H J ^a   Lee, J E ^a   Shin, Y G ^a   Choi, S ^a   Chung, C ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC ELECTRODES; MAGNETIC RANDOM ACCESS MEMORIES; MAGNETIC TUNNEL JUNCTION; MATERIAL ENGINEERING; MRAM UNITS; NON-VOLATILE MEMORIES; NOR FLASH; OFF-AXIS; OPERATION CURRENTS; SPIN TRANSFER TORQUE; STRUCTURE DESIGN; SWITCHING CURRENT DENSITY; TECHNOLOGY NODES;

DYNAMIC RANDOM ACCESS STORAGE; ELECTRON DEVICES; FLASH MEMORY; MAGNETIC STORAGE; NANOTECHNOLOGY; TUNNEL JUNCTIONS;

MRAM DEVICES;

EID: 79951826965     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703350     Document Type: Conference Paper

References (5)

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