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Volumn 3, Issue 5, 2010, Pages

High magnetoresistance ratio and low resistance-area product in magnetic tunnel junctions with perpendicularly magnetized electrodes

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; ELECTRODE LAYERS; FREE LAYERS; LOW RESISTANCE; LOW TEMPERATURES; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTANCE RATIO; MAGNETORESISTIVE RANDOM ACCESS MEMORIES; MR RATIO; POST ANNEALING; REFERENCE LAYER; ROOM TEMPERATURE; SPIN TRANSFER; ULTRAHIGH DENSITY;

EID: 77952765401     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.053003     Document Type: Article
Times cited : (90)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.