Effect of annealing treatment on electroluminescence from GaN/Si nanoheterostructure array

Optics Express

Volumn 20, Issue 5, 2012, Pages 5636-5643

  Han, Chang Bao ^a   He, Chuan ^a   Meng, Xiao Bo ^a   Wan, Ya Rui ^a   Tian, Yong Tao ^a   Zhang, Ying Jiu ^a   Li, Xin Jian ^a  

^a ZHENGZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTROLUMINESCENCE; GALLIUM NITRIDE;

ANNEALING TREATMENTS; AS-GROWN; EMISSION WAVELENGTH; GAN NANOSTRUCTURES; NEAR INFRARED BAND; RADIATIVE TRANSITIONS; SILICON NANOPOROUS PILLAR ARRAY; YELLOW BANDS;

LIGHT EMITTING DIODES;

GALLIUM; GALLIUM NITRIDE; NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; HARDNESS; HEAT; INSTRUMENTATION; LUMINESCENCE; NANOTECHNOLOGY; ULTRASTRUCTURE;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; HARDNESS; HOT TEMPERATURE; LUMINESCENT MEASUREMENTS; NANOSTRUCTURES; NANOTECHNOLOGY; SILICON;

EID: 84857566627     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.005636     Document Type: Article

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