Study of radiative defects using current-voltage characteristics in ZnO rods catalytically grown on 4H-p-SiC

Journal of Nanomaterials

Volumn 2010, Issue , 2010, Pages

  Bano, N ^a   Hussain, I ^a   Nur, O ^a   Willander, M ^a   Klason, P ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF GOTHENBURG   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; CONDUCTION PROCESS; CURRENT TRANSPORT; CURRENT TRANSPORT MECHANISM; CURRENT VOLTAGE MEASUREMENT; DEEP LEVEL; DEEP LEVEL TRAP; ENERGY-BAND DIAGRAM; HETEROSTRUCTURES; HIGH QUALITY; LIQUID SOLIDS; RADIATIVE DEFECTS; ROOM TEMPERATURE; SIC SUBSTRATES; SPACE-CHARGE-LIMITED CURRENT; TRAP CONCENTRATION; TUNNELING MECHANISM; VIOLET EMISSION; ZNO; ZNO ROD;

CARRIER TRANSPORT; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON SOLAR CELLS; ZINC; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77956815116     PISSN: 16874110     EISSN: 16874129     Source Type: Journal    
DOI: 10.1155/2010/817201     Document Type: Article

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