Mechanism of large area dislocation defect reduction in GaN layers on AlNSi (111) by substrate engineering

Journal of Applied Physics

Volumn 102, Issue 2, 2007, Pages

  Jamil, M ^a   Grandusky, J R ^a   Jindal, V ^a   Tripathi, N ^a   Shahedipour Sandvik, F ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; DISLOCATIONS (CRYSTALS); EPITAXIAL FILMS; INTERFACES (MATERIALS); ION IMPLANTATION; METALLIC FILMS; POLYSILICON;

CRYSTAL QUALITY; HETEROEPITAXIAL GAN FILM; POLYCRYSTALLINE DEFECTIVE LAYER;

GALLIUM NITRIDE;

EID: 34547562933     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2753706     Document Type: Article

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