Near-infrared light emission from a GaN/Si nanoheterostructure array

Advanced Materials

Volumn 23, Issue 41, 2011, Pages 4811-4814

  Han, Chang Bao ^a   He, Chuan ^a   Li, Xin Jian ^a  

^a ZHENGZHOU UNIVERSITY   (China)

Author keywords

electroluminescence (EL); GaN Si nanoheterostructure; near infrared light emitting diodes; silicon nanoporous pillar array (Si NPA)

Indexed keywords

GAN/SI NANOHETEROSTRUCTURE; LUMINESCENT MECHANISM; NANO GRAINS; NEAR INFRA RED; NEAR INFRARED LIGHT; RADIATIVE RECOMBINATION; SILICON NANOPOROUS PILLAR ARRAY; SILICON NANOPOROUS PILLAR ARRAY (SI-NPA);

ELECTROLUMINESCENCE; GALLIUM NITRIDE; INFRARED DEVICES; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

LIGHT;

GALLIUM; GALLIUM NITRIDE; NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; INFRARED RADIATION; INSTRUMENTATION; LUMINESCENCE; POROSITY; SEMICONDUCTOR;

ELECTRIC CONDUCTIVITY; GALLIUM; INFRARED RAYS; LUMINESCENT MEASUREMENTS; NANOSTRUCTURES; POROSITY; SEMICONDUCTORS; SILICON;

EID: 80054990769     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201101801     Document Type: Article

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