A 95% efficient normally-off GaN-on-Si HEMT hybrid-IC boost-converter with 425-W output power at 1 MHz

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2011, Pages

  Hughes, Brian ^a   Yoon, Yeong Y ^a   Zehnder, Daniel M ^a   Boutros, Karim S ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

Converter; efficiency; GaN; high electron mobility transistors (HEMTs); high voltage; power device; switching power supply

Indexed keywords

CONVERTER; GAN; HIGH VOLTAGE; POWER DEVICES; SWITCHING POWER SUPPLY;

CONVERSION EFFICIENCY; DC-DC CONVERTERS; EFFICIENCY; ELECTRIC POWER SUPPLIES TO APPARATUS; GALLIUM ARSENIDE; GALLIUM NITRIDE; INTEGRATED CIRCUITS; INTEGRATION; POWER ELECTRONICS; SAPPHIRE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON ALLOYS; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 81455139441     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2011.6062460     Document Type: Conference Paper

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