The effect of the post-growth annealing on the electroluminescence properties of n-ZnO nanorods/p-GaN light emitting diodes

Superlattices and Microstructures

Volumn 47, Issue 6, 2010, Pages 754-761

  Alvi, N H ^a   Willander, M ^a   Nur, O ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

EL; Post growth annealing; ZnO nanorods

Indexed keywords

AMBIENTS; AQUEOUS CHEMICAL GROWTH; AS-GROWN; DEEP-LEVEL DEFECTS; ELECTROLUMINESCENCE PROPERTIES; EMISSION PEAKS; EXTRINSIC DEFECTS; GAN LIGHT-EMITTING DIODES; GREEN REGIONS; LOW TEMPERATURES; NITROGEN ANNEALING; POSTGROWTH ANNEALING; RED EMISSIONS; TEMPERATURE DEPENDENCE; ZNO; ZNO NANOROD;

ANNEALING; ARGON; DEFECTS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; NANORODS; OXYGEN; OXYGEN VACANCIES; ZINC OXIDE;

ELECTROLUMINESCENCE;

EID: 77953323811     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2010.03.002     Document Type: Article

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