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Volumn 93, Issue 17, 2008, Pages

Rectification effect and electron transport property of CdS/Si nanoheterostructure based on silicon nanoporous pillar array

(2) Xu, Hai Jun a Li, Xin Jian a

a ZHENGZHOU UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM COMPOUNDS; DISTILLATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; IONIZATION OF GASES; LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; SILICON; STRONTIUM COMPOUNDS; SULFUR; TRANSPORT PROPERTIES;

ELECTRON TRANSPORTS; FORWARD CURRENTS; NANO DEVICES; NANOHETEROSTRUCTURE; NANOPOROUS; ONSET VOLTAGES; PILLAR ARRAYS; PROMISING MATERIALS; RECTIFICATION EFFECTS; REVERSE BREAKDOWN VOLTAGES; SILICON NANOPOROUS PILLAR ARRAYS;

ELECTRIC RECTIFIERS;

EID: 55149124428 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3002297 Document Type: Article

Times cited : (33)

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