Size effects of nano-pattern in Si(1 1 1) substrate on the selective growth behavior of GaN nanowires by MOCVD

Materials Research Bulletin

Volumn 47, Issue 3, 2012, Pages 836-842

  Park, Ji Hyeon ^a   Navamathavan, R ^a   Lee, Cheul Ro ^a  

^a Chonbuk National University   (South Korea)

Author keywords

A. Nanostructures; A. Nitrides; A. Semiconductors; B. Crystal growth; B. Vapor deposition

Indexed keywords

AVERAGE DIAMETER; BULK CRYSTALS; BULK GRAINS; ETCHING PROCESS; GAN NANOWIRES; LARGE DIAMETER; MIXED PHASE; NANO PATTERN; NANO-DROPLETS; SELECTIVE GROWTH; SI (1 1 1); SIZE EFFECTS;

CRYSTAL GROWTH; DROPS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; SILICON;

SUBSTRATES;

EID: 84857508215     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2011.11.039     Document Type: Article

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