Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition

Applied Physics Letters

Volumn 80, Issue 19, 2002, Pages 3548-3550

  Kim, Jae Ryoung ^a   So, Hye Mi ^a   Park, Jong Wan ^a   Kim, Ju Jin ^a   Kim, Jinhee ^b   Lee, Cheol Jin ^c   Lyu, Seung Chul ^c  

^a Chonbuk National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; ELECTRICAL MEASUREMENT; ELECTRICAL TRANSPORT PROPERTIES; ELECTRON TRANSPORT; FIELD EFFECTS; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; HIGH QUALITY; METAL ELECTRODES; MODULATION CHARACTERISTICS; NITROGEN VACANCIES; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE;

ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GALLIUM NITRIDE; NANOWIRES; TRANSPORT PROPERTIES; VAPORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79956040790     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1478158     Document Type: Article

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