Influence on the growth temperature for one-dimesional GaN nanostructures by halide vapor-phase epitaxy

Journal of Ceramic Processing Research

Volumn 6, Issue 3, 2005, Pages 197-200

  Byeun, Yun Ki ^a,b   Han, Kyong Sop ^a   Choi, Sung Churl ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

GaN; Halide vapor phase epitaxy; One dimensional nanostructure; Single crystal growth

Indexed keywords

EID: 26844462190     PISSN: 12299162     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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