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Volumn 51, Issue 2 PART 2, 2012, Pages

Impact of light-element impurities on crystalline defect generation in silicon wafer

(10) Tachibana, Tomihisa a Sameshima, Takashi a Kojima, Takuto b Arafune, Koji c Kakimoto, Koichi d Miyamura, Yoshiji e Harada, Hirofumi e Sekiguchi, Takashi e Ohshita, Yoshio b Ogura, Atsushi a

a MEIJI UNIVERSITY (Japan)

b TOYOTA TECHNOLOGICAL INSTITUTE (Japan)

c UNIVERSITY OF HYOGO (Japan)

d KYUSHU UNIVERSITY (Japan)

e NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE DEFECTS; CRYSTALLINE IMPERFECTION; ETCH PIT DENSITY; MULTI-CRYSTALLINE SILICON; SMALL-ANGLE GRAIN BOUNDARIES; UNIDIRECTIONAL SOLIDIFICATION;

COMPUTER SIMULATION; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; DEFECTS; GRAIN BOUNDARIES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SILICON WAFERS;

ARGON;

EID: 84857483320 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.02BP08 Document Type: Article

Times cited : (10)

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