Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon

Journal of Applied Physics

Volumn 94, Issue 1, 2003, Pages 140-144

  Lu, Jinggang ^a   Wagener, Magnus ^a   Rozgonyi, George ^a   Rand, James ^b   Jonczyk, Ralf ^b  

^a North Carolina State University   (United States)

^b GE ENERGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; POLYCRYSTALLINE MATERIALS; SILICON WAFERS;

IMPURITY GETTERING;

GRAIN BOUNDARIES;

EID: 0042205661     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1578699     Document Type: Article

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