Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed

Journal of Crystal Growth

Volumn 312, Issue 7, 2010, Pages 897-901

  Takahashi, Isao ^a   Usami, Noritaka ^a   Kutsukake, Kentaro ^a   Stokkan, Gaute ^b   Morishita, Kohei ^a   Nakajima, Kazuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

A1. Defects; A1. Dislocation; A2. Growth from melt; B2. Semiconducting Silicon; B3. Solar cells

Indexed keywords

A1. DISLOCATION; B2. SEMICONDUCTING SILICON; B3.SOLAR CELL; CRYSTALLOGRAPHIC ORIENTATIONS; DIRECTIONAL SOLIDIFICATION; FINITE ELEMENT ANALYSIS; GENERATION MECHANISM; GROWTH FROM MELTS; MULTI-CRYSTALLINE SILICON; MULTICRYSTALLINE SI; SLIP PLANE; STRESS DISTRIBUTION; STRUCTURAL MODIFICATIONS;

CRYSTAL GROWTH; CRYSTALLIZATION; DEFECTS; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; POLYSILICON; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SHEAR STRESS; SOLAR CELLS; STRENGTH OF MATERIALS; STRESS CONCENTRATION;

DISLOCATIONS (CRYSTALS);

EID: 77249083601     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.01.011     Document Type: Article

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