Study of the degradation of p-n diode characteristics caused by small-angle grain boundaries in multi-crystalline silicon substrate for solar cells

Japanese Journal of Applied Physics

Volumn 48, Issue 12, 2009, Pages

  Tachibana, Tomihisa ^a   Masuda, Junichi ^a   Imai, Keita ^a   Ogura, Atsushi ^a   Ohshita, Yoshio ^a,b   Arafune, Koji ^a,c   Tajima, Michio ^a,d  

^a MEIJI UNIVERSITY   (Japan)

^b TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^c UNIVERSITY OF HYOGO   (Japan)

^d JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTOMETRY; ELECTRICAL CHARACTERISTIC; ELECTRON-BEAM-INDUCED CURRENT; MULTI-CRYSTALLINE SILICON; OXYGEN IMPURITY; P-N DIODE; SI SOLAR CELLS; SMALL-ANGLE GRAIN BOUNDARIES; TEM;

CONVERSION EFFICIENCY; CRYSTALLINE MATERIALS; DEGRADATION; ENERGY CONVERSION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SOLAR CELLS; SOLAR ENERGY; TRANSMISSION ELECTRON MICROSCOPY;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 75149113975     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.121202     Document Type: Article

References (15)

1. Report IEA-PVPS T1-13: International Energy Agency Photovoltaic Power Systems Program (2004).
2. M. Yamaguchi, Y. Ohshita, K. Arafune, H. Sai, and M. Tachibana: Sol. Energy 80 (2006) 104.
3. K. Arafune, T. Sasaki, F. Wakabayashi, Y. Terada, Y. Ohshita, and M. Yamaguchi: Physica B 376- 377 (2006) 236.
4. Y. Ohshita, Y. Nishikawa, M. Tachibana, V. K. Tuong, T. Sasaki, N. Kojima, S. Tanaka, and M. Yamaguchi: J. Cryst. Growth 275 (2005) e491.
5. T. Taishi, T. Hoshikawa, M. Yamatani, K. Shirasawa, X. Huang, S. Uda, and K. Hoshikawa: J. Cryst. Growth 306 (2007) 452.
6. K. Arafune, E. Ohishi, H. Sai, Y. Terada, Y. Ohshita, and M. Yamaguchi: Jpn. J. Appl. Phys. 45 (2006) 6153.
7. N. Usami, K. Kutsukake, T. Sugawara, K. Fujiwara, W. Pan, Y. Nose, T. Shishido, and K. Nakajima: Jpn. J. Appl. Phys. 45 (2006) 1734.
8. R. Ludemann: Mater. Sci. Eng. B 58 (1999) 86.
9. T. Yagi, K. Nishioka, Y. Uraoka, and T. Fuyuki: Jpn. J. Appl. Phys. 43 (2004) 4068.
10. H. Sugimoto, M. Tajima, T. Eguchi, I. Yamaga, and T. Saitoh: Mater. Sci. Semicond. Process. 9 (2006) 102.
11. H. Sugimoto, M. Inoue, M. Tajima, A. Ogura, and Y. Ohshita: Jpn. J. Appl. Phys. 45 (2006) L641.
12. J. Chen, T. Sekiguchi, R. Xie, P. Ahmet, T. Chikyo, D. Yang, S. Ito, and F. Yin: Scr. Mater. 52 (2005) 1211.
13. J. Chen and T. Sekiguchi: Jpn. J. Appl. Phys. 46 (2007) 6489.
14. H. Sugimoto, K. Araki, M. Tajima, T. Eguchi, I. Yamaga, M. Dhamrin, K. Kamisako, and T. Saitoh: J. Appl. Phys. 102 (2007) 054506.
15. M. Kittler, W. Seifert, T. Arguirov, I. Tarasov, and S. Ostapenko: Sol. Energy Mater. Sol. Cells 72 (2002) 465.