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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 10 A, 2007, Pages 6489-6497

Carrier recombination activity and structural properties of small-angle grain boundaries in multicrystalline silicon

(2) Chen, Jun a Sekiguchi, Takashi a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

EBIC; Grain boundaries; mc Si; Small angle

Indexed keywords

CARRIER CONCENTRATION; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; LOW TEMPERATURE EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

BOUNDARY DISLOCATION; CARRIER RECOMBINATION ACTIVITIES; ELECTRON-BEAM-INDUCED CURRENT (EBIC); SMALL-ANGLES;

POLYSILICON;

EID: 35348869708 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.6489 Document Type: Article

Times cited : (105)

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